Toggle-type magnetoresistive random access memory

Details Toggle-type magnetoresistive random access memory Toggle-type magnetoresistive random access memory

2005-03-02

2008-10-21

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S210100

Reexamination Certificate

active

07440314

ABSTRACT:
A MRAM includes: first wirings, second wirings, memory cells, a second sense amplifier and a first sense amplifier. The first wirings and second wirings are extended in a first and a second direction. The memory cells are placed correspondingly to positions where the first wirings are crossed with the second wirings. The second sense amplifier detects a state of a reference cell on the basis of an output from the reference cell provided by corresponding to a reference wiring. The first sense amplifier (2) detects a state of the memory cell on the basis of an output from the reference cell and an output from the memory cell. The memory cell includes a magnetic tunneling junction element having a laminated free layer. The magnetic tunneling junction element has a magnetization easy axis direction which is different from the first and second directions.

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