TMOS-infrared uncooled sensor and focal plane array

Details TMOS-infrared uncooled sensor and focal plane array TMOS-infrared uncooled sensor and focal plane array

2004-02-15

2009-02-10

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

With heat sink means

C257S706000, C257SE31122, C438S122000

Reexamination Certificate

active

07489024

ABSTRACT:
An array of uncooled infrared sensors based on a micro-machined temperature sensitive MOS transistor. The sensor array is fabricated using a commercial CMOS process on SOI wafers, followed by backside silicon dry etching for each sensor pixel. Active sensor pixels may include either, an integrator and buffer, or simply the sensing transistor, serving also as the selection device. The transistor bias controls the selected device and the sensitivity of the sensor. PMOS transistors and switched operation are used for noise minimization.

REFERENCES:
patent: 5578841 (1996-11-01), Vasquez et al.

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