TiW platinum interconnect and method of making the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S686000

Reexamination Certificate

active

06878626

ABSTRACT:
A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack includes a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.

REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5099305 (1992-03-01), Takenaka
patent: 5229309 (1993-07-01), Kato
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5638946 (1997-06-01), Zavracky
“Development of Flexible Stimulation Devices For A Retina Implant System,” Stieglitz et al. 19thInternational Conference-IEEE/EMBSOct. 30-Nov. 2, 1997, Chicago, IL.
“Chemical Vapor Deposition (CVD) of Iridium and Platinum Films and Gas-Phase Chemical Etching of Iridium Thin Films,” Xu et al.Mat. Res. Soc.Symp.Proc. vol. 541, 1999.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

TiW platinum interconnect and method of making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with TiW platinum interconnect and method of making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TiW platinum interconnect and method of making the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3407638

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.