TiW platinum interconnect and method of making the same

Details TiW platinum interconnect and method of making the same TiW platinum interconnect and method of making the same

2005-04-12

2005-04-12

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S686000

Reexamination Certificate

active

06878626

ABSTRACT:
A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack includes a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.

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“Development of Flexible Stimulation Devices For A Retina Implant System,” Stieglitz et al. 19thInternational Conference-IEEE/EMBSOct. 30-Nov. 2, 1997, Chicago, IL.
“Chemical Vapor Deposition (CVD) of Iridium and Platinum Films and Gas-Phase Chemical Etching of Iridium Thin Films,” Xu et al.Mat. Res. Soc.Symp.Proc. vol. 541, 1999.

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