TiW barrier metal process

Details TiW barrier metal process TiW barrier metal process

1991-12-19

1994-03-01

King, Roy

Coating processes

Electrical product produced

Metal coating

427124, 427318, 427319, 427404, 427405, 437190, 437192, 437194, B05D 512, B05D 302

Patent

active

052905888

ABSTRACT:
An improved process is provided for forming a multilayer structure (18) suitable for tape automated bonding thereto or for forming contacts. In the process, a first layer (12) of aluminum is formed on a substrate (10), a second layer (14) of a TiW alloy is formed on the first layer of aluminum, and a third layer (16) of gold is formed on the second layer of the TiW alloy, to which third layer of gold bonding is done. The improvement comprises annealing the second layer of the TiW alloy in an inert atmosphere at a temperature less than about 500.degree. C. for a period of time sufficient to form a film of an Al--TiW phase (20), believed to comprise TiAl.sub.3, at the interface between the first layer of aluminum and the second layer of the TiW alloy. The annealing is done prior to forming the third layer of gold on the second layer of the TiW alloy.

REFERENCES:
patent: 4816424 (1989-03-01), Watanabe et al.
patent: 4880708 (1989-11-01), Sharma et al.
patent: 4981816 (1991-01-01), Kim et al.
Nowicki et al., "Studies of the Ti-W/Au metallization on aluminum", Thin Solid Films, 53 (1978) pp. 195-205.
Walters et al, "Properties of Reactive Sputtered TiW", Solid State Technology, pp. 131-136 (Feb. 1986).

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