Titanium underlayer for lines in semiconductor devices

Details Titanium underlayer for lines in semiconductor devices Titanium underlayer for lines in semiconductor devices

2007-02-20

2007-02-20

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C257S770000, C257SE21204

Reexamination Certificate

active

10510641

ABSTRACT:
A thin Titanium underlayer22is included beneath a Titanium rich Titanium Nitride layer28in a metal line20on a silicon substrate to reduce stress voiding.

REFERENCES:
patent: 5960320 (1999-09-01), Park
patent: 6140224 (2000-10-01), Lin
patent: 6346480 (2002-02-01), Yamamoto et al.
patent: 6443743 (2002-09-01), Saran
patent: WO 97/06562 (1997-02-01), None

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