Titanium tantalum nitride silicide layer

Details Titanium tantalum nitride silicide layer Titanium tantalum nitride silicide layer

2006-05-09

2006-05-09

Meeks, Timothy (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255393, C427S255280, C427S248100, C427S255360, C427S255391

Reexamination Certificate

active

07041335

ABSTRACT:
Methods and apparatus of forming titanium tantalum silicon nitride (TixTay(Si)Nz) layers are described. The titanium tantalum silicon nitride (TixTay(Si)Nz) layer may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor, a tantalum-containing precursor, a nitrogen-containing gas and a silicon-containing gas on a substrate. The titanium-containing precursor, the tantalum-containing precursor, the silicon-containing precursor and the nitrogen-containing precursor react to form the titanium tantalum silicon nitride (TixTay(Si)Nz) layer on the substrate. The formation of the titanium tantalum silicon nitride (TixTay(Si)Nz) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium tantalum silicon nitride (TixTay(Si)Nz) layer is used as a diffusion barrier for a copper metallization process.

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