Titanium silicide interconnect method

Details Titanium silicide interconnect method Titanium silicide interconnect method

1996-12-11

1999-07-13

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438651, 438680, 438682, 438683, H01L 214763

Patent

active

059240091

ABSTRACT:
A technology of forming a semiconductor integrated device is disclosed. According to the technology, titanium silicide is formed from an interaction between a source of TiCl.sub.2 transformed from TiCl.sub.4, and a source of hydrogen containing gas. The silicide layer includes a relatively planar interface with the gate electrode, the relatively planar interface being substantially free from gouges formed by a redistribution of a portion of the silicon atoms in the gate electrode.

REFERENCES:
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 5344793 (1994-09-01), Zeininger et al.
patent: 5393565 (1995-02-01), Suzuki et al.
Patent Abstracts of Japan, 5-090207, Apr. 9, 1993.
Patent Abstracts of Japan, 7-094446, Apr. 7, 1995.
Patent Abstracts of Japan, 7-235607, Sep. 5, 1995.
Patent Abstracts of Japan, 8-283944, Oct. 29, 1996.

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