Titanium nitride thin film formation on metal substrate by...

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

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C427S248100, C427S250000, C427S255230, C427S576000, C204S192120, C204S192160

Reexamination Certificate

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07438955

ABSTRACT:
A procedure for the synthesis of titanium nitride (TiN) thin films on metal substrate by vapor deposition using a magnetized sheet plasma source is disclosed. TiN films on metal substrate exhibiting the stoichiometric TiN and Ti2N were synthesized in a mixed N2/Ar plasma with initial gas filing ratio of preferably 1:3 under the following conditions: total initial gas filing pressure of at least about 40 mTorr, plasma current in the range of about 2A to 3A and plasma discharge potential in the range of about 125V to about 150V.

REFERENCES:
patent: 4885068 (1989-12-01), Uramoto et al.
patent: 5192410 (1993-03-01), Ito et al.
patent: 5439574 (1995-08-01), Kobayashi et al.
patent: 5487922 (1996-01-01), Nieh et al.
patent: 5919342 (1999-07-01), Ngan
patent: 6071572 (2000-06-01), Mosely et al.
patent: 2001/0030125 (2001-10-01), D'Couto et al.
patent: 2002/0125123 (2002-09-01), Ngan et al.
patent: 2073963 (1990-03-01), None
patent: 6088222 (1994-03-01), None
patent: 6264212 (1994-09-01), None
patent: 11097884 (1999-04-01), None
Abate et al. Optimization and enhancement of H- ions ina magnetized sheet plasma, Review of Scientific Instruments 71(10) Oct. 2000 pp. 3689-3695.
Sanchez et al. Extraction characteristics of H- ions ina magnetized sheet plasma. Plasma Source Sci Technol. 5 (1996) pp. 416-423.
Jose Karl et al., “Extraction characteristics of H- ions in a Magnetized sheet plasma”, 1996, pp. 416-423.
Yohannes Abate and Henry J. Ramos, “Review of Scientific Instruments”, Oct. 2000, pp. 3689-3595.

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