Titanium nitride sputter targets

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419221, 204298, 419 13, 419 49, 423411, 501 96, C23C 1434, C22C 3200, C01B 21076, C04B 3558

Patent

active

048203939

ABSTRACT:
The present invention provides a sputter target for the deposition of titanium nitride films. The sputter target has a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride. The sputter target is prepared by subjecting titanium nitride powder to hot isostatic pressure.

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Kanamori, "Investigation of Reactively Sputtered TiN Films for Diffusion Barriers", Thin Solid Films, 136, 195 (1986).
Ostling et al, "A Comparative Study of the Diffusion Barrier Properties of TiN and ZrN", Thin Solid Films, 145, 81 (1986).

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