TiO.sub.x as an anti-reflection coating for metal lithography

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430311, 430314, 430317, 430318, 430329, 430950, 156643, 1566591, G03F 726, G03C 500

Patent

active

052866084

ABSTRACT:
A new method of producing an anti-reflection coating is described. The reflective metal layer of an integrated circuit is covered with titanium. The titanium layer is oxidized. The resulting titanium oxide layer is the anti-reflection coating (ARC) of the present invention. This ARC layer is covered with photoresist. The photoresist layer is selectively exposed to light by directing light through a patterned mask to form a pattern on the photoresist layer. The metal layer is etched in accordance with the pattern. The remaining resist is stripped off. An inter-metal dielectric layer is deposited over the patterned first metal and titanium oxide layers. A second photoresist layer is deposited and selectively exposed to light through a second photomask. The titanium oxide layer again acts to limit the reflection of light off the first metal layer and through the transparent inter-metal dielectric. The exposed inter-metal layer is etched away to the underlying first metal layer. The remaining photoresist is removed. In-situ sputtering, performed to remove native metal oxide, also removes any of the remaining titanium oxide layer. This results in the desired pattern of openings in the inter-metal dielectric. A subsequent metal layer can be deposited, making contact with the first metal through the openings created in the inter-metal dielectric.

REFERENCES:
patent: 4495220 (1985-01-01), Wolf
patent: 4767660 (1988-08-01), Hosoda
patent: 4820611 (1989-04-01), Arnold

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