Tin thin film formation method

Coating processes – Electrical product produced – Welding electrode

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427 541, 4271261, 423440, 423410, 423411, B05D 306, B05D 512, C01B 2108, C01B 21076

Patent

active

050809270

ABSTRACT:
A thin film formation method includes the steps of holding a substrate in a reduced-pressure vapor phase reaction chamber having means for irradiating light in visible and ultraviolet ranges, supplying an organo-titanium compound containing a tri-azo group, and vapor-depositing a titanium nitride film on a surface of the substrate by an excitation reaction caused by light.

REFERENCES:
patent: 4434189 (1984-02-01), Zaplatynsky
patent: 4446242 (1984-05-01), Holt
patent: 4812301 (1989-03-01), Davidson et al.
patent: 4867223 (1989-09-01), Matsumura et al.
patent: 4889745 (1989-12-01), Sata

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