Tin-indium antimonide infrared detector

Details Tin-indium antimonide infrared detector Tin-indium antimonide infrared detector

1994-09-13

1996-03-05

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

257615, 257184, 257189, 257441, H01L 310304

Patent

active

054970296

ABSTRACT:
A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.

REFERENCES:
patent: 4238232 (1980-12-01), Minomura
"Effect of Tin Doping on InSb Thin Films", M. Oszwaldowski et al., Thin Solid Films, 172:71-80 (1989).
"Improving the Performance of InAs.sub.1-x Sb.sub.x /InSb Infrared Detectors Grown By Metalorganic Chemical Vapor Deposition", R. M. Biefeld et al., Journal of Crystal Growth, 107:836-839 (1991).

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