Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2008-06-27
2010-12-14
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S189040
Reexamination Certificate
active
07852659
ABSTRACT:
A phase change memory device is presented that includes a phase change resistance cell array and a cache register. The phase change resistance cell array includes a phase change resistor configured to sense crystallization changed depending on currents so as to store data corresponding to resistance change. The cache register is configured to store a plurality of data applied externally depending on a register write command and to simultaneously output the plurality of data to the phase change resistance cell array depending on a cell write command.
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Hong Suk Kyoung
Kang Hee Bok
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Tran Anthan T
Zarabian Amir
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