Ti-W sputtering target and method for manufacturing same

Details Ti-W sputtering target and method for manufacturing same Ti-W sputtering target and method for manufacturing same

1994-09-12

1995-11-28

Walsh, Donald P.

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Plural heating steps including sintering

419 23, 419 32, 419 48, 419 38, 419 60, B22F 310

Patent

active

054705274

ABSTRACT:
A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.

REFERENCES:
patent: 3615382 (1968-08-01), Manilla
patent: 4838935 (1989-06-01), Dunlop et al.
patent: 5160534 (1992-11-01), Hiraki
patent: 5196916 (1993-03-01), Ishigami et al.
patent: 5204057 (1993-04-01), Ishigami et al.
patent: 5234487 (1993-08-01), Wickersham, Jr. et al.
M. Yamauchi and T. Kibayashi, "Development of W-Ti Binary Alloy Sputtering Target and Study of its Sputtering Characteristics", International Journal of Refractory and Hard Metals, vol. 9, No. 3, Sep. 1990 at 146.

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