Ti precursor, method of preparing the same, method of...

Details Ti precursor, method of preparing the same, method of... Ti precursor, method of preparing the same, method of...

2005-11-21

2009-02-17

McNeil, Jennifer (Department: 4162)

Compositions

Electrically conductive or emissive compositions

Elemental carbon containing

C252S519120, C420S417000

Reexamination Certificate

active

07491347

ABSTRACT:
A Ti-precursor for forming a Ti-containing thin layer represented by the formula I below, a method of preparing the same, a method of preparing a Ti-containing thin layer by employing the Ti-precursor and the Ti-containing thin layer are provided:whereinX1and X2are independently F, Cl, Br or I; n is 0, 1, 2, 3, 4 or 5; m is 0, 1, 2, 3, 4, 5, 6 or 7; and R1and R2are independently a linear or branched C1-10alkyl group. The Ti precursor for forming the Ti-containing thin layer can be deposited at a deposition temperature of approximately 150° C.˜200° C., and a Ti-containing thin layer with a high performance character can be prepared.

REFERENCES:
patent: 2004/0083963 (2004-05-01), Dando et al.
patent: 0 088 562 (1983-09-01), None
patent: 2002-0016748 (2002-03-01), None
Raush, Marvin et al. Synthetic and Structure Studied on Carboxy, Carbomethoxy, and (n5-Cyclopentadienyl)(n7-Cycloheptatrienyl) Titanium, 1991, American Chemical Society, Organometallics vol. 10, No. 6, pp. 2084-2086.
Koutsopoulos, S. et al. Inhibition of Hydroxyapatite Crystal Growth by Substituted Titanocenes, Jul. 6, 2000, American Chemical Society, Langmuir vol. 16, No. 16, pp. 6745-6749.

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