Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-23
2005-08-23
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S606000, C438S039000
Reexamination Certificate
active
06933220
ABSTRACT:
A thyristor for switching microwave signals includes semiconductor layers disposed on a substrate. A first surface of the thyristor defines an anode, and a second surface of the thyristor defines a cathode. The semiconductor layers include at least one semi-insulating layer. The thyristor transmits a microwave signal between the anode and the cathode in an ON state and blocks the microwave signal between the anode and the cathode in an OFF state.
REFERENCES:
patent: 4952028 (1990-08-01), Tashiro
patent: 5291041 (1994-03-01), Burke et al.
patent: 5360990 (1994-11-01), Swanson
patent: 5365477 (1994-11-01), Cooper, Jr. et al.
patent: 6552371 (2003-04-01), Levine et al.
Freske Stanley
Holden Thomas
LaRue Ross
Levine Jules D.
Katten Muchin & Rosenman LLP
Teraburst Networks Inc.
Tsai H. Jey
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