Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2007-10-23
2007-10-23
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S124000, C257SE29213, C438S133000, C438S151000
Reexamination Certificate
active
11077731
ABSTRACT:
An integrated circuit structure includes a semiconductor substrate and a horizontal semiconductor fin on top of the semiconductor substrate. An access transistor gate and a thyristor gate are on top of the semiconductor substrate and in contact with the horizontal semiconductor fin. An access transistor is at least a portion of the horizontal semiconductor fin and the access transistor gate. A thyristor is at least a portion of the horizontal semiconductor fin and the thyristor gate, the access transistor is in contact with the thyristor.
REFERENCES:
patent: 7135745 (2006-11-01), Horch et al.
Li Weining
Quek Elgin
Yelehanka Pradeep R.
Zheng Jia Zhen
Chartered Semiconductor Manufacturing Ltd.
Ishimaru Mikio
Le Dung A.
Zahrt, II William D.
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