Thyristor-based memory array having lines with standby voltages

Details Thyristor-based memory array having lines with standby voltages Thyristor-based memory array having lines with standby voltages

2011-06-28

2011-06-28

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S175000, C365S174000, C365S229000

Reexamination Certificate

active

07969777

ABSTRACT:
A new memory cell can contain only a single thyristor. There is no need to include an access transistor in the cell. In one embodiment, the thyristor is a thin capacitively coupled thyristor. The new memory cell can be connected to word, bit, and control lines in several ways to form different memory arrays. Timing and voltage levels of word, bit and control lines are disclosed.

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