Thyristor-based device with trench dielectric material

Details Thyristor-based device with trench dielectric material Thyristor-based device with trench dielectric material

2008-05-20

2008-05-20

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S292000, C438S295000, C438S296000, C438S115000, C257SE21388, C257SE21389, C257SE21390, C257SE21392

Reexamination Certificate

active

07374974

ABSTRACT:
A thyristor-based semiconductor device includes a thyristor body that has at least one region in the substrate and a thyristor control port in a trenched region of the device substrate. According to an example embodiment of the present invention, the trench is at least partially filled with a dielectric material and a control port adapted to capacitively couple to the at least one thyristor body region in the substrate. In a more specific implementation, the dielectric material includes deposited dielectric material that is adapted to exhibit resistance to voltage-induced stress that thermally-grown dielectric materials generally exhibit. In another implementation, the dielectric material includes thermally-grown dielectric material, and when used in connection with highly-doped material in the trench, grows faster on the highly-doped material than on a sidewall of the trench that faces the at least on thyristor body region in the substrate. In still another implementation, the dielectric material includes both a thermally-grown dielectric material and a deposited dielectric material. These approaches are particularly useful, for example, in high-density and other applications where thermally-stable dielectric materials are desirable and/or where dielectric material growth at different rates is desirable.

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