Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2005-01-18
2005-01-18
Nelms, David (Department: 2818)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S159000, C365S180000, C365S189110, C711S108000
Reexamination Certificate
active
06845026
ABSTRACT:
A content addressable memory (CAM) cell includes a memory cell storing data values. The memory cell includes a surrounding-gate thyristor and an access transistor. The CAM cell also includes a compare circuit coupled among the memory cell and a match line. The compare circuit receives data and comparand data and affects a logical state of a match line in response to a predetermined relationship between the data and comparand data. The compare circuit includes a first transistor set coupled for conduction state control by signals representative of the data, and a second transistor set coupled for conduction state control by signals representative of the comparand data.
REFERENCES:
patent: 5600160 (1997-02-01), Hvistendahl
patent: 6104045 (2000-08-01), Forbes et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6448586 (2002-09-01), Nemati et al.
patent: 6462359 (2002-10-01), Nemati et al.
patent: 6528356 (2003-03-01), Nemati et al.
patent: 6552398 (2003-04-01), Hsu et al.
patent: 20040056270 (2004-03-01), Hsu et al.
patent: 20040156233 (2004-08-01), Bhattacharyya
Nelms David
NetLogic Microsystems, Inc.
Pham Ly Duy
Shemwell Gregory & Courtney LLP
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