Through-wafer vias

Details Through-wafer vias Through-wafer vias

2007-03-23

2010-06-22

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23011, C438S629000, C438S637000

Reexamination Certificate

active

07741722

ABSTRACT:
A through-wafer via structure and method for forming the same. The through-wafer via structure includes a wafer having an opening and a top wafer surface. The top wafer surface defines a first reference direction perpendicular to the top wafer surface. The through-wafer via structure further includes a through-wafer via in the opening. The through-wafer via has a shape of a rectangular plate. A height of the through-wafer via in the first reference direction essentially equals a thickness of the wafer in the first reference direction. A length of the through-wafer via in a second reference direction is at least ten times greater than a width of the through-wafer via in a third reference direction. The first, second, and third reference directions are perpendicular to each other.

REFERENCES:
patent: 6013579 (2000-01-01), Wang et al.
patent: 6287960 (2001-09-01), Lao
patent: 6667549 (2003-12-01), Cahill
patent: 6960490 (2005-11-01), Cunningham
patent: 1595633 (2005-03-01), None
patent: WO2007024666 (2007-03-01), None

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