Through wafer via and method of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor

Reexamination Certificate

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C257S774000, C257SE23174, C257SE21597, C438S667000

Reexamination Certificate

active

08035198

ABSTRACT:
A through wafer via structure. The structure includes: a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to between greater than halfway to and all the way to the bottom surface of the substrate. Also methods for fabricating the though wafer via structure.

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