Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2008-08-08
2011-10-11
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S774000, C257SE23174, C257SE21597, C438S667000
Reexamination Certificate
active
08035198
ABSTRACT:
A through wafer via structure. The structure includes: a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to between greater than halfway to and all the way to the bottom surface of the substrate. Also methods for fabricating the though wafer via structure.
REFERENCES:
patent: 4666556 (1987-05-01), Fulton et al.
patent: 4690729 (1987-09-01), Douglas
patent: 5933748 (1999-08-01), Chou et al.
patent: 5998292 (1999-12-01), Black et al.
patent: 6406934 (2002-06-01), Glenn et al.
patent: 6836020 (2004-12-01), Cheng et al.
patent: 7005388 (2006-02-01), Hopper et al.
patent: 7056813 (2006-06-01), Morrow et al.
patent: 7071098 (2006-07-01), Kirby et al.
patent: 7224051 (2007-05-01), Farnworth et al.
patent: 7259454 (2007-08-01), Tanida et al.
patent: 7271491 (2007-09-01), Akram
patent: 7276787 (2007-10-01), Edelstein et al.
patent: 2005/0248002 (2005-11-01), Newman et al.
patent: 2006/0001174 (2006-01-01), Matsui
patent: 2006/0006539 (2006-01-01), Matsui et al.
patent: 2006/0105496 (2006-05-01), Chen et al.
patent: 2006/0118965 (2006-06-01), Matsui
patent: 2006/0154438 (2006-07-01), Kishimoto et al.
patent: 2006/0197119 (2006-09-01), Chinthakindi et al.
patent: 2006/0214298 (2006-09-01), Huang et al.
patent: 2006/0275946 (2006-12-01), MacNamara et al.
patent: 2007/0045779 (2007-03-01), Hiatt
patent: 2007/0048896 (2007-03-01), Andry et al.
patent: 2007/0190692 (2007-08-01), Erturk et al.
patent: 2007/0196948 (2007-08-01), Trezza
patent: 2007/0197018 (2007-08-01), Chen et al.
patent: 2008/0079131 (2008-04-01), Kim et al.
patent: 2008/0099870 (2008-05-01), Wilson et al.
patent: 2009/0215237 (2009-08-01), Disney et al.
patent: 2009/0244954 (2009-10-01), Cannon et al.
patent: 2009/0267126 (2009-10-01), Wang et al.
patent: 2011/0012196 (2011-01-01), Williams et al.
U.S. Appl. No. 12/188,236, filed Aug. 8, 2008; Confirmation No. 4587; Customer No. 30449.
U.S. Appl. No. 12/188,230, filed Aug. 8, 2008; Confirmation No. 4600; Customer No. 30449.
U.S. Appl. No. 12/188,236, filed Aug. 8, 2008; Confirmation No. 4618; Customer No. 30449.
U.S. Appl. No. 12/188,241, filed Aug. 8, 2008; Confirmation No. 4625; Customer No. 30449.
Notice of Allowance (Mail Date Oct. 30, 2009) for U.S. Appl. No. 12/188,230, filed Aug. 8, 2008; Confirmation No. 4600.
Office Action (Mail Date Apr. 28, 2011) for U.S. Appl. No. 12/188,241, filed Aug. 8, 2008.
Office Action (Mail Date Jul. 28, 2011) for U.S. Appl. No. 12/188,228—Filing Date Aug. 8, 2008.
Ding Hanyi
Joseph Alvin Jose
Stamper Anthony Kendall
Gumedzoe Peniel M
International Business Machines - Corporation
Kotulak Richard M.
Lee Eugene
Schmeiser Olsen & Watts
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