Through-substrate via for semiconductor device

Details Through-substrate via for semiconductor device Through-substrate via for semiconductor device

2011-07-05

2011-07-05

Loke, Steven (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S706000

Reexamination Certificate

active

07973413

ABSTRACT:
A semiconductor device including a substrate having a front surface and a back surface is provided. A plurality of interconnect layers are formed on the front surface and have a first surface opposite the front surface of the substrate. A tapered profile via extends from the first surface of the plurality of interconnect layers to the back surface of the substrate. In one embodiment, a insulating layer is formed on the substrate and includes an opening, and wherein the opening includes conductive material providing contact to the tapered profile via.

REFERENCES:
patent: 4814041 (1989-03-01), Auda
patent: 5913148 (1999-06-01), Hills
patent: 5949140 (1999-09-01), Nishi et al.
patent: 5960315 (1999-09-01), Gambino et al.
patent: 6580175 (2003-06-01), Lee
patent: 7081408 (2006-07-01), Lane et al.
patent: 7288481 (2007-10-01), Nemoto
patent: 2004/0262767 (2004-12-01), Matsuo
patent: 2006/0091430 (2006-05-01), Sriram et al.
patent: 2006/0180938 (2006-08-01), Kurihara et al.
patent: 2007/0114668 (2007-05-01), Goto et al.
patent: 2007/0132088 (2007-06-01), Kariya et al.

Affiliated with

Also associated with

Rating

Through-substrate via for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Through-substrate via for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Through-substrate via for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2661013