Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-07-05
2011-07-05
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S706000
Reexamination Certificate
active
07973413
ABSTRACT:
A semiconductor device including a substrate having a front surface and a back surface is provided. A plurality of interconnect layers are formed on the front surface and have a first surface opposite the front surface of the substrate. A tapered profile via extends from the first surface of the plurality of interconnect layers to the back surface of the substrate. In one embodiment, a insulating layer is formed on the substrate and includes an opening, and wherein the opening includes conductive material providing contact to the tapered profile via.
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Chen Chih-Hua
Chen-Shien Chen
Ching Kai-Ming
Kuo Chen-Cheng
Haynes and Boone LLP
Loke Steven
Taiwan Semiconductor Manufacturing Company , Ltd.
Thomas Kimberly M
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