Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2009-01-05
2011-11-01
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S621000, C257S774000, C257SE23011
Reexamination Certificate
active
08049327
ABSTRACT:
A semiconductor device having one or more through-silicon vias (TSVs) is provided. The TSVs are formed such that sidewalls of the TSVs have a scalloped surface. In an embodiment, the sidewalls of the TSVs are sloped wherein a top and bottom of the TSVs have different dimensions. The TSVs may have a V-shape wherein the TSVs have a wider dimension on a circuit side of the substrate, or an inverted V-shape wherein the TSVs have a wider dimension on a backside of the substrate. The scalloped surfaces of the sidewalls and/or sloped sidewalls allow the TSVs to be more easily filled with a conductive material such as copper.
REFERENCES:
patent: 2006/0046463 (2006-03-01), Watkins et al.
patent: 2009/0093117 (2009-04-01), Taguchi et al.
Chen Chen-Shien
Chen Chih-Hua
Chen Ming-Fa
Kuo Chen-Cheng
Jefferson Quovaunda V
Slater & Matsil L.L.P.
Smith Matthew
Taiwan Semiconductor Manufacturing Company , Ltd.
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