Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-06-28
2011-06-28
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S773000, C257SE23070, C257SE23174, C438S637000
Reexamination Certificate
active
07969013
ABSTRACT:
A through silicon via structure includes a top pad and a vertical conductive post that is connected to the top pad. The top pad covers a wider area than the cross section of the vertical conductive post. An interconnect pad is formed at least partially below the top pad. An under layer is also formed at least partially below the top pad. At least one dummy structure connects the top pad and the under layer to fasten the top pad and the interconnect pad.
REFERENCES:
patent: 7605080 (2009-10-01), Koizumi et al.
Chen Chen-Shien
Chen Chih-Hua
Kuo Chen-Cheng
Shen Wen-Wei
Lowe Hauptman & Ham & Berner, LLP
Payen Marvin
Pham Thanh V
Taiwan Semiconductor Manufacturing Company , Ltd.
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