Through-silicon via formed with a post passivation...

Details Through-silicon via formed with a post passivation... Through-silicon via formed with a post passivation...

2011-04-26

2011-04-26

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S773000, C257S775000, C257SE23020

Reexamination Certificate

active

07932608

ABSTRACT:
An integrated circuit structure includes a semiconductor substrate, a through-silicon via (TSV) extending into the semiconductor substrate, a pad formed over the semiconductor substrate and spaced apart from the TSV, and an interconnect structure formed over the semiconductor substrate and electrically connecting the TSV and the pad. The interconnect structure includes an upper portion formed on the pad and a lower portion adjacent to the pad, and the upper portion extends to electrically connect the TSV.

REFERENCES:
patent: 7026233 (2006-04-01), Cheng et al.
patent: 7605080 (2009-10-01), Koizumi et al.
patent: 2007/0048969 (2007-03-01), Kwon et al.
patent: 2009/0026614 (2009-01-01), Jung
patent: 101006582 (2007-07-01), None
Office Action from corresponding application No. CN201010119558.3, Dec. 29, 2010.

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