Through silicon via bridge interconnect

Details Through silicon via bridge interconnect Through silicon via bridge interconnect

2011-06-28

2011-06-28

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S778000, C257S774000, C257SE29002

Reexamination Certificate

active

07969009

ABSTRACT:
An integrated circuit bridge interconnect system includes a first die and a second die provided in a side-by-side configuration and electrically interconnected to each other by a bridge die. The bridge die includes through silicon vias (TSVs) to connect conductive interconnect lines on the bridge die to the first die and the second die. Active circuitry, other than interconnect lines, may be provided on the bridge die. At least one or more additional die may be stacked on the bridge die and interconnected to the bridge die.

REFERENCES:
patent: 5225633 (1993-07-01), Wigginton
patent: 2006/0095639 (2006-05-01), Guenin et al.
patent: 2007/0216036 (2007-09-01), Krishnamoorthy et al.
patent: 1587141 (2005-10-01), None
patent: 0180317 (2001-10-01), None
International Search Report—PCT/US2009/048372, International Search Authority—European Patent Office Nov. 26, 2009.
Written Opinion—PCT/US2009/048372, International Search Authority—European Patent Office Nov. 26, 2009.

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