Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2008-08-20
2011-11-15
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S773000, C257S774000, C257S775000, C257S777000, C257SE23169, C257SE23174, C257SE23175
Reexamination Certificate
active
08058708
ABSTRACT:
A through-hole interconnection structure for a semiconductor wafer, in which: the each wafer includes at least a first wafer and a second wafer electrically connected to the first wafer; an electrical signal connecting section of the second wafer is provided to protrude from a bonding surface of the second wafer, the bonding surface being bonded with the first wafer; and the electrical signal connecting section has a cross section with a curved line or two or more straight lines extending in different directions when the second wafer is seen along a cross section parallel to the bonding surface.
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Birch & Stewart Kolasch & Birch, LLP
Gumedzoe Peniel M
Honda Motor Co. Ltd.
Lee Eugene
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