Through glass ROM code implant to reduce product delivering time

Details Through glass ROM code implant to reduce product delivering time Through glass ROM code implant to reduce product delivering time

1996-05-30

1997-10-28

Niebling, John

Fishing, trapping, and vermin destroying

437 48, 437 52, H01L 21265

Patent

active

056817720

ABSTRACT:
A read only memory semiconductor integrated circuit device includes an improved cell region and a method of manufacture therefor. The improved cell region includes a recessed dielectric region overlying a gate electrode region. Such recessed dielectric region allows for an implanting or coding step to occur after the dielectric layer is applied to the surface of the device. Coding of the ROM device during a latter processing step shortens product turn-around-time. The improved cell also includes an improved method of manufacture. Such method provides for a dielectric layer formed over a gate electrode of a partially completed device. The method further provides etching the upper portion of the dielectric layer overlying the gate electrode to form a recessed region. A step of coding or implanting is then performed to change the device from enhancement mode into depletion mode, thereby providing the ROM code for the designated cell.

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Wolf et al., Silicon Processing for the VLSI Era, 1986, Lattice Press, Chapter 16, pp. 539-541.

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