Through-electrode, circuit board having a through-electrode,...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor

Reexamination Certificate

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Details

C257S774000, C257SE23011, C257SE23067, C257SE23145, C257SE23174, C361S728000, C361S736000, C361S748000

Reexamination Certificate

active

08072046

ABSTRACT:
A stacked semiconductor package includes a first semiconductor package having a first semiconductor chip having a first pad and a through-hole passing through a the portion corresponding to the pad; a second semiconductor package disposed over the first semiconductor package, and including a second semiconductor chip having a second pad disposed at a portion corresponding to the first pad and blocking the through-hole; and a through-electrode disposed within the through-hole, and having a pillar shaped core supported by the second pad, a through-electrode unit disposed over a surface of the core and electrically connected with the second pad, a first metal layer interposed between the core and the through electrode unit, and a second metal layer interposed between an inner surface of the first semiconductor chip formed by the through-hole and the through-electrode unit.

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patent: 7345350 (2008-03-01), Sinha
patent: 7898063 (2011-03-01), Lindgren et al.
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patent: 2008/0237806 (2008-10-01), Uchiyama
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patent: 2006-019455 (2006-01-01), None

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