Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2008-09-12
2011-12-06
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S774000, C257SE23011, C257SE23067, C257SE23145, C257SE23174, C361S728000, C361S736000, C361S748000
Reexamination Certificate
active
08072046
ABSTRACT:
A stacked semiconductor package includes a first semiconductor package having a first semiconductor chip having a first pad and a through-hole passing through a the portion corresponding to the pad; a second semiconductor package disposed over the first semiconductor package, and including a second semiconductor chip having a second pad disposed at a portion corresponding to the first pad and blocking the through-hole; and a through-electrode disposed within the through-hole, and having a pillar shaped core supported by the second pad, a through-electrode unit disposed over a surface of the core and electrically connected with the second pad, a first metal layer interposed between the core and the through electrode unit, and a second metal layer interposed between an inner surface of the first semiconductor chip formed by the through-hole and the through-electrode unit.
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Bae Han Jun
Kim Jong Hoon
Gumedzoe Peniel M
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Lee Eugene
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