Threshold voltage stabilizer, method of manufacturing and...

Details Threshold voltage stabilizer, method of manufacturing and... Threshold voltage stabilizer, method of manufacturing and...

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S402000, C257S901000

Reexamination Certificate

active

06885054

ABSTRACT:
The present invention provides a threshold voltage stabilizer for use with a MOS transistor having a body effect associated therewith. In one embodiment, the threshold voltage stabilizer, includes a body well located in a substrate, a source located in the body well, and a stabilization region positioned below the body well. The threshold voltage stabilizer is configured to provide a stabilization voltage to the stabilization region to increase a depletion region within the body well and thereby restrict the body effect to stabilize a threshold voltage of the MOS transistor.

REFERENCES:
patent: 5894145 (1999-04-01), Chen et al.
patent: 6507235 (2003-01-01), Sher

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