Threshold voltage control layer in a semiconductor device

Details Threshold voltage control layer in a semiconductor device Threshold voltage control layer in a semiconductor device

2007-12-04

2007-12-04

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C257S653000, C257S657000, C257S927000, C257SE29005

Reexamination Certificate

active

11410047

ABSTRACT:
A semiconductor device has a well region having a first conductivity type and formed in an upper portion of a semiconductor substrate, a gate insulating film and a gate electrode formed successively on the well region of the semiconductor substrate, a threshold voltage control layer for controlling a threshold voltage formed in the portion of the well region which is located below the gate electrode and in which an impurity of the first conductivity type has a concentration peak at a position shallower than in the well region, an extension region having a second conductivity type and formed in the well region to be located between each of the respective portions of the well region which are located below the both end portions in the gate-length direction of the gate electrode and the threshold voltage control layer, and source and drain regions each having the second conductivity type and formed outside the extension layer in connected relation thereto. The junction surface between the threshold voltage control layer and the extension region has an upwardly protruding configuration.

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Quirk et al., “Characteristics of Semiconductor Materials,” Semiconductor Manufacturing Technology, Prentice Hall, 2001, pp. 33-39.

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