Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-03-21
2006-03-21
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S187000, C365S189040, C365S072000, C365S233100, C365S051000
Reexamination Certificate
active
07016246
ABSTRACT:
A memory includes first circuit RFPDRAM including memory cells and operating in response to first clock signal, second circuit and third circuit coupled with first circuit and bus coupling first circuit to second and third circuits. The second circuit outputs in response to second clock signal, first address signal to first circuit. The third circuit outputs in response to third clock signal, second address signal to first circuit. The first circuit includes refresh control circuit executing refresh operation for memory cells in response to fourth clock signal and address latch for storing first or second address signal in response to first clock signal. The first clock signal has frequency equal to or more than sum of frequencies respectively of second, third, and fourth clock signals.
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Akiyama Satoru
Mizuno Hiroyuki
Watanabe Takao
Hitachi , Ltd.
Hur J. H.
Miles & Stockbridge PC
Phung Anh
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