Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-04-12
2011-04-12
Arora, Ajay K (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S093000, C257SE33001, C438S022000, C438S024000, C438S046000, C438S047000
Reexamination Certificate
active
07923737
ABSTRACT:
A combined semiconductor device can be formed by bonding the thin-film three-terminal switching elements to a surface of an integrated circuit chip including a shift register that shifts data supplied to the control electrodes of the three-terminal switching elements, or by bonding both the thin-film three-terminal switching elements and another thin semiconductor film including the shift register to a substrate. In either case, thin-film wiring can be used to interconnect the shift register and the switching elements, and the need for an array of large transistors to feed driving current to the switching elements is eliminated, reducing the size and cost of the combined semiconductor device, which can be advantageously used in the optical head of an electrophotographic printer.
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Hakko Daiodo Aoki, “Light-Emitting Diodes”, Kogyo Chosakai Publishing Co., Ltd., pp. 167-169, (1977).
Arora Ajay K
Oki Data Corporation
Panitch Schwarze Belisario & Nadel LLP
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