Three-terminal switch array device, combined semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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Details

C257S093000, C257SE33001, C438S022000, C438S024000, C438S046000, C438S047000

Reexamination Certificate

active

07923737

ABSTRACT:
A combined semiconductor device can be formed by bonding the thin-film three-terminal switching elements to a surface of an integrated circuit chip including a shift register that shifts data supplied to the control electrodes of the three-terminal switching elements, or by bonding both the thin-film three-terminal switching elements and another thin semiconductor film including the shift register to a substrate. In either case, thin-film wiring can be used to interconnect the shift register and the switching elements, and the need for an array of large transistors to feed driving current to the switching elements is eliminated, reducing the size and cost of the combined semiconductor device, which can be advantageously used in the optical head of an electrophotographic printer.

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Hakko Daiodo Aoki, “Light-Emitting Diodes”, Kogyo Chosakai Publishing Co., Ltd., pp. 167-169, (1977).

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