Three-terminal non-volatile ferroelectric/superconductor thin fi

Details Three-terminal non-volatile ferroelectric/superconductor thin fi Three-terminal non-volatile ferroelectric/superconductor thin fi

1995-06-19

1997-11-11

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056867450

ABSTRACT:
A three-terminal non-volatile ferroelectric/superconductor thin film field effect transistor (FsuFET). The FSuFET is used as a non-volatile memory storage device that provides two static states and four transient states. The FSuFET includes a superconducting film epitaxially grown on a substrate layer. A ferroelectric thin film is then epitaxially grown on the superconducting layer to form the gate of the FSuFET. A drain electrode and a source electrode are then contacted to the superconducting film on either side of the ferroelectric gate. In static mode, the two polarization states of the ferroelectric gate correspond to the binary "0" and "1" states, which are switched by applying a voltage pulse of sufficient magnitude. In transient mode, the four states depend upon the polarization state of the ferroelectric gate and the conductive state (superconducting or non-superconducting) of the drain-source channel. The four states are generated at the drain of the FSuFET and consist of a positive, high pulse; a positive, low pulse; a negative, high pulse; and a negative, low pulse.

REFERENCES:
patent: 3832700 (1974-08-01), Wu et al.
patent: 5155658 (1992-10-01), Inam et al.
patent: 5168420 (1992-12-01), Ramesh et al.
J. Mannhart et al., "Influence of Electric Fields on Pinning in YBA.sub.2 ACU.sub.3 O.sub.7-x Films", 67 Phys. Rev. Lett. 2099-2101 (Oct. 1991).
X. Xi et al., "Electric Field Effect in a High Tc Superconducting Ultrathin YBA2Cu3O7-X Films", 59 Appl. Phys. Lett 3470-3472 (Dec. 1991).
F.P. Gnadinger & D.W. Bondurant,"Ferroelectrics for Nonvolatile RAMs," IEEE Spectrum 30-33, (Jul., 1989).
J.F. Scott & C.A. Paz de Araujo, "Ferroelectric Memories," 246 Science 1400-1405 (Dec. 1989).
S.Y. Wu, "Memory Retention and Switching Behavior of Metal-Ferroelectric-Semiconductor Transistors," 11 Ferroelectrics 379-383 (1976).
H. Buhay et al., "Pulsed Laser Deposition and Ferroelectric Characterization of Bismuth Titanate Films," 58 Appl. Phys. Lett. 1470-1472 (Apr. 1991).
T.A. Rost et al., "Ferroelectric Switching of a Field-Effect Transistor with a Lithium Niobate Gate Insulator," 59 Appl. Phys. Lett. 3654-3656 (Dec. 1991).
V.V. Lemanov et al., "Ferroelectric-Superconductor Structures with Electric-Field-Controlled Memory", 18 Sov. Tech. Phys. Lett 494-495 (Aug. 1992).
N.J. Wu et al., "Heterostructures of PB(ZR.sub.x Ti.sub.1-x)O.sub.3 and YBa2Cu3O7-X on MgO Structure Prepared by Pulsed Laser Ablation," 32 Jpn. J. Appl. Phys. 5019-5023 (Nov. 1993).
N.J. Wu et al., H. LIN, K. Xie, X. Y. LI and A. Ignatiev, "A Comparison Study of (100) and (110) BA.sub.0.5 SR.sub.0.5 TIO.sub.3 Epitaxial Thin Films Grown on Superconducting YBA2CU3O7-X Thin Film Substrates," C232 Physica 151-157 (1994).
N.J. Wu et al., "Study of BA.sub.1-x SR.sub.x TiO.sub.3 (100) Epitaxial Thin Films Preared by Laser Deposition," IEEE Spectrum 464-467 (1995).
He Lin et al., "Ferroelectric Switching and Fatigue Behavior for PZT/YBCO Thin Film Heterostructures," 5 Integrated Ferroelectrics 197-202 (1994).
W.K. Chu et al., "Radiation Effects of High-Tc Superconductors," B59/60 Nuclear Instr. and Meth. in Phys. Res. 1447-1457 (1991).
He Lin et al., "The Transient Behavior and Memory Effect of a PBZR.sub.x TI.sub.1-x O.sub.3 /YBA.sub.2 CU.sub.3 O.sub.7-x Three-Terminal Device", 65 Appl. Phys. Lett. 953-955 (Aug. 1994).
N.J. Wu et al., "PZT/YBCO Integration and Characterization of a Three Terminal Device" 156 Ferroelectrics & Related Mater. 73-78 (Jun. 1994).
X.X. Xi et al., "Voltage-Current Characteristics of a High T.sub.c Superconducting Field Effect Device," 61 Appl. Phys. Lett. 2353-2355 (Nov. 1992).
Shu-Yau Wu, "A New Ferroelectric Memory Device, Metal-Ferroelectric-Semiconductor Transistor," ED-21 IEEE Transactions on Electron Devices 499-504 (Aug. 1974).
J. Mannhart, "High-T.sub.c Three Terminal Devices," Workshop on RIS Josephson Junctions and Three-Terminal Devices, Netherlands, 1-8 (May 1994).

Affiliated with

Also associated with

Rating

Three-terminal non-volatile ferroelectric/superconductor thin fi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three-terminal non-volatile ferroelectric/superconductor thin fi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-terminal non-volatile ferroelectric/superconductor thin fi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1231382