Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-03-07
2006-03-07
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S050000
Reexamination Certificate
active
07009877
ABSTRACT:
A magnetic memory device for reading and writing a data state comprises at least three terminals including first, second, and third terminals. The magnetic memory device also includes a spin transfer (ST) driven element, disposed between the first terminal and the second terminal, and a readout element, disposed between the second terminal and the third terminal. The ST driven element includes a first free layer, and a readout element includes a second free layer. A magnetization direction of the second free layer in the readout element indicates a data state. A magnetization reversal of the first free layer within the ST driven element magnetostatically causes a magnetization reversal of the second free layer in the readout element, thereby recording the data state.
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Albert Frank
Huai Yiming
Nguyen Paul P.
Grandis Inc.
Le Thong Q.
Sawyer Law Group LLP
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