Three-gate transistor structure

Details Three-gate transistor structure Three-gate transistor structure

2006-05-15

2008-09-02

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S317000, C257S321000, C257S366000, C257S401000

Reexamination Certificate

active

07420253

ABSTRACT:
A transistor structure comprises a semiconductor element extending between a source zone and a drain zone, as well as three portions of gates disposed on different sides of the semiconductor element. Such a structure is especially compact and may be used as two or three transistors having independent respective functions. In particular, the structure may be used as a combination of a transistor with a logic or analog function, with one or two random access memory cells.

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