Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-11-20
2007-11-20
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S753000, C438S701000, C438S947000, C257SE21223, C216S002000, C216S011000
Reexamination Certificate
active
10515334
ABSTRACT:
A three-dimensional structure composed of highly-reliable silicon ultrafine wires, a method for producing the three-dimensional structure, and a device including the same are provided. The three-dimensional structure composed of silicon fine wires includes wires (2) on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material.
REFERENCES:
patent: 5171992 (1992-12-01), Clabes et al.
patent: 5399415 (1995-03-01), Chen et al.
patent: 5543351 (1996-08-01), Hirai et al.
patent: 5856967 (1999-01-01), Mamin et al.
patent: 6013573 (2000-01-01), Yagi
patent: 6611178 (2003-08-01), Kawakatsu et al.
patent: 2001/0019029 (2001-09-01), Tai et al.
patent: 2002/0048962 (2002-04-01), Sekimura
patent: 2002/0108926 (2002-08-01), Witvrouw et al.
patent: 2005/0247998 (2005-11-01), Kawakatsu et al.
patent: 05-083487 (1993-04-01), None
patent: 05-234984 (1993-09-01), None
patent: 06-018257 (1994-01-01), None
patent: 06302513 (1994-10-01), None
patent: 07022605 (1995-01-01), None
patent: 08-094647 (1996-04-01), None
patent: 8-506857 (1996-07-01), None
patent: 11-515092 (1999-12-01), None
patent: 2001-004455 (2001-01-01), None
patent: 2001-091441 (2001-04-01), None
Eri, Masayoshi. “Shin Sensing Gijutsu o Mezashite Dai 8 Kai Microsensor”, Keisoku to Seigyo, vol. 36, No. 11, pp. 808-817 1997.
Normand, P. et al. “Fabrication of Si nano-wires using anisotropic dry and wet etching”, Microelectronic Engineering, vol. 41/42, pp. 551-554 1998.
Hu, Hsin-Hwa et al. “The diagnostic micromachined beams on (1 1 1) substrate”, Sensors and Actuators A, vol. 93, pp. 258-265 2001.
U.S. Appl. No. 10/567,904, filed Feb. 10, 2006, Kobayashi et al.
U.S. Appl. No. 10/564,447, filed Jan. 12, 2006, Kobayashi et al.
Kawakatsu Hideki
Kobayashi Dai
Fourson George
Japan Science and Technology Agency
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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