Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2003-03-18
2009-10-20
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S151000
Reexamination Certificate
active
07606059
ABSTRACT:
A programmable resistance memory device includes a semiconductor substrate, at least one cell array, in which memory cells are arranged and formed above the semiconductor substrate. Each of the memory cells has a stack structure of a programmable resistance element and an access element, the programmable resistance element storing a high resistance state or a low resistance state based on the polarity of voltage application in a non-volatile manner. The access element has a resistance value in an off-state in a certain voltage range that is ten time or more as high as that in a select state. A read/write circuit is formed on the semiconductor substrate and underlying the cell array for data reading and data writing in communication with the cell array.
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Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tran Andrew Q
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