Three-dimensional package and method of making the same

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

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C257S685000, C257S700000, C257S723000, C257S777000, C257S778000

Reexamination Certificate

active

07446404

ABSTRACT:
A three-dimensional package including a first wafer having at least one first pad and a first protection layer exposing the first pad. A first hole penetrates the first wafer. A first isolation layer is disposed on the side wall of the first hole. The lower end of a first conductive layer extends below the surface of the first wafer. A first metal is disposed in the first hole, and is electrically connected to the first pad via the first conductive layer. A first solder is disposed on the first metal in the first hole, wherein the melting point of the first solder is lower than that of the first metal. A second wafer is configured similarly as the first wafer. A lower end of a second conductive layer of the second wafer extends below the surface of the second wafer and contacts the upper end of the first solder.

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