Static information storage and retrieval – Read/write circuit – Common read and write circuit
Reexamination Certificate
2010-05-11
2010-11-23
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Read/write circuit
Common read and write circuit
C365S189070, C365S189080, C365S189090, C365S189050, C365S153000, C365S148000, C365S051000, C365S063000
Reexamination Certificate
active
07839702
ABSTRACT:
A non-volatile register includes a memory element. The memory element comprises a first end and a second end. The non-volatile register includes a register logic connected with the first and second ends of the memory element. The register logic is positioned below the memory element. The memory element may be a two-terminal memory element configured to store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the two terminals. New data can be written to the two-terminal memory element by applying a write voltage of a predetermined magnitude and/or polarity across the two terminals. The two-terminal memory element retains stored data in the absence of power. A reference element including a structure that is identical or substantially identical to the two-terminal memory element may be used to generate a reference signal for comparisons during read operations.
REFERENCES:
patent: 7715244 (2010-05-01), Norman
Tran Andrew Q
Unity Semiconductor Corporation
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