Three-dimensional micropattern profile measuring system and...

Details Three-dimensional micropattern profile measuring system and... Three-dimensional micropattern profile measuring system and...

2006-05-02

2006-05-02

Lauchman, Layla G. (Department: 2877)

Optics: measuring and testing

With plural diverse test or art

C250S492300, C356S634000, C356S635000

Reexamination Certificate

active

07038767

ABSTRACT:
A light beam is emitted to a test pattern place formed in the scribe area on the wafer for height measurement, an electron beam is emitted to the test pattern place for width and contrast measurement and their correlations are stored. The three-dimensional profile of a pattern in a semiconductor device on the wafer is determined by irradiating the pattern with an electron beam to measure the width and contrast and estimating the height of the pattern by inferring from a correlation corresponding to the measured width and contrast. Thus, a three-dimensional profile measuring system and method capable of measuring the three-dimensional profile of a micropattern in a semiconductor device without cutting the wafer are provided.

REFERENCES:
patent: 5607800 (1997-03-01), Ziger
patent: 6151120 (2000-11-01), Matsumoto et al.
patent: 6388253 (2002-05-01), Su
patent: 6407373 (2002-06-01), Dotan
patent: 6650424 (2003-11-01), Brill et al.
patent: 4-342942 (1992-11-01), None
patent: 8-255751 (1996-10-01), None

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