Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-20
2005-12-20
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S764000
Reexamination Certificate
active
06977223
ABSTRACT:
Method for making three-dimensional structures. A template is provided having at least two conductive regions separated by a non-conductive region. The template is disposed in an electrolyte in an electrodeposition cell and a voltage is established between one of the conductive regions and an electrode in the cell. Material is deposited on the one of the conductive regions connected to the voltage and subsequently bridges to the other conductive region with material deposition continuing on both of the at least two regions. The non conductive region may be a gap and the gap dimension is selected to regulate height differences between the at least two conductive regions.
REFERENCES:
patent: 4936956 (1990-06-01), Wrighton
patent: 2237291 (1991-05-01), None
George Paul M.
Langer Robert S.
Lavan David A.
Choate Hall & Stewart LLP
Everhart Caridad
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