Three-dimensional memory cells

Details Three-dimensional memory cells Three-dimensional memory cells

2008-09-17

2010-12-07

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

C257S390000, C257SE27102, C257SE27103

Reexamination Certificate

active

07847283

ABSTRACT:
The present invention discloses a three-dimensional memory (3D-M) with polarized 3D-ROM (three-dimensional read-only memory) cells. Polarized 3D-ROM can ensure a larger unit array and therefore, a better integratibility.

REFERENCES:
patent: 5835396 (1998-11-01), Zhang
patent: 7442997 (2008-10-01), Zhang
patent: 2008/0099929 (2008-05-01), Li et al.

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