Three-dimensional memory cells

Details Three-dimensional memory cells Three-dimensional memory cells

2006-09-07

2008-10-28

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S183000, C257SE27102, C257SE27103, C257SE21677

Reexamination Certificate

active

07442997

ABSTRACT:
The present invention discloses a three-dimensional memory (3D-M) with polarized 3D-ROM (three-dimensional read-only memory) cells. Polarized 3D-ROM can ensure a larger unit array and therefore, a better integratibility. The present invention further discloses a 3D-M with seamless 3D-ROM cells. Seamless 3D-ROM can ensure a better manufacturing yield.

REFERENCES:
patent: 5627395 (1997-05-01), Witek et al.
patent: 5835396 (1998-11-01), Zhang
patent: 2002/0163829 (2002-11-01), Bulovic et al.
patent: 2003/0076649 (2003-04-01), Speakman

Affiliated with

Also associated with

Rating

Three-dimensional memory cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three-dimensional memory cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-dimensional memory cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4012885