Three-dimensional memory cell with integral select transistor

Details Three-dimensional memory cell with integral select transistor Three-dimensional memory cell with integral select transistor

1990-03-09

1990-10-16

Clawson, Jr., Joseph E.

Static information storage and retrieval

Floating gate

Particular biasing

357 234, 357 235, 357 55, G11C 1140

Patent

active

049640801

ABSTRACT:
A three-dimensional floating gate memory cell including an integral select gate transistor is disclosed. Source and drain are formed in a silicon substrate wherein the drain is formed under a slot which has been etched into the body of the substrate. In this way, the channel defined between the source and drain has both horizontal and vertical regions. The cell also includes a floating gate, which is completely surrounded with insulation, and a control gate which is insulated above and extends over the floating gate. The control gate is also insulated above and extends over the vertical portion of the channel within the slot. This allows the second gate member to regulate the current flowing in the vertical portion of the channel; that is, the second gate member and the vertical channel section form an integral select device.

REFERENCES:
patent: 4290078 (1981-09-01), Ronen
patent: 4364074 (1982-12-01), Garnache et al.
patent: 4542396 (1985-09-01), Schutten et al.
patent: 4656607 (1987-04-01), Hagiwara et al.
patent: 4763181 (1988-08-01), Tasch
patent: 4774556 (1988-09-01), Fujii et al.
patent: 4801985 (1989-01-01), Baliga et al.
patent: 4835741 (1989-05-01), Baglee
patent: 4845539 (1989-07-01), Inoue
patent: 4861730 (1989-08-01), Hsia et al.
patent: 4929988 (1990-05-01), Yoshikawa

Affiliated with

Also associated with

Rating

Three-dimensional memory cell with integral select transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three-dimensional memory cell with integral select transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-dimensional memory cell with integral select transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-855149