Three-dimensional island pixel photo-sensor

Details Three-dimensional island pixel photo-sensor Three-dimensional island pixel photo-sensor

2006-05-09

2006-05-09

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S081000

Reexamination Certificate

active

07041525

ABSTRACT:
A method and structure for a photodiode array comprising a plurality of photodiode cores, light sensing sidewalls along an exterior of the cores, logic circuitry above the cores, trenches separating the cores, and a transparent material in the trenches is disclosed. With the invention, the sidewalls are perpendicular to the surface of the photodiode that receives incident light. The light sensing sidewalls comprise a junction region that causes electron transfer when struck with light. The sidewalls comprise four vertical sidewalls around each island core. The logic circuitry blocks light from the core so light is primarily only sensed by the sidewalls.

REFERENCES:
patent: 5061652 (1991-10-01), Bendernagel et al.
patent: 6021050 (2000-02-01), Ehman et al.
patent: 6111305 (2000-08-01), Yoshida et al.
patent: 6133615 (2000-10-01), Guckel et al.
patent: 6210537 (2001-04-01), Murphy et al.
patent: 402273926 (1990-11-01), None
patent: 407058439 (1995-03-01), None

Affiliated with

Also associated with

Rating

Three-dimensional island pixel photo-sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three-dimensional island pixel photo-sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-dimensional island pixel photo-sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3588430