Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2006-07-04
2006-07-04
Chaudhari, Chandra (Department: 2825)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S014000, C438S015000, C438S017000, C438S050000, C438S052000, C438S460000, C438S461000, C257S254000, C216S002000, C216S052000
Reexamination Certificate
active
07071031
ABSTRACT:
A vertically integrated structure includes a micro-electromechanical system (MEMS) and a chip for delivering signals to the MEMS. The structure includes a metal stud connecting a surface of the chip and the MEMS; the MEMS has an anchor portion having a conducting pad on an underside thereof contacting the metal stud. The MEMS is spaced from the chip by a distance corresponding to a height of the metal stud, and the MEMS includes a doped region in contact with the conducting pad. In particular, the MEMS may include a cantilever structure, with the end portion including a tip extending in the vertical direction. A support structure (e.g. of polyimide) may surround the metal stud and contact both the underside of the MEMS and the surface of the chip. A temporary carrier plate is used to facilitate handling of the MEMS and alignment to the chip.
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Despont Michel
Drechsler Ute
Pogge H. Bernhard
Vettiger Peter
Yu Roy
Blecker Ira D.
Chaudhari Chandra
Lee, Jr. Granvill D.
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