Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1994-09-26
1996-01-23
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365 45, G11C 1122
Patent
active
054870313
ABSTRACT:
A ferroelectric integrated circuit is provided in which a first layer of conducting lines (14) is formed over an insulating base layer (10). A first ferroelectric layer (16) is formed overlying the first layer of conducting lines (14). A second layer of conducting lines (18) is formed overlying the first ferroelectric layer (16) with each of the conducting lines of the second layer of conducting lines (18) being substantially perpendicular to the conducting lines of the first layer of conducting lines (14). Potentials placed on selected conducting lines in the first and second layers of conducting lines (14 and 18) polarize areas of the first ferroelectric layer (16) between intersections of the selected conducting lines. Multiple layers may be stacked to form a three-dimensional ferroelectric integrated circuit.
REFERENCES:
patent: 4149302 (1979-04-01), Cook
patent: 4707897 (1987-11-01), Rohrer et al.
Gnade Bruce E.
Littler Christopher L.
Pinizzotto Russell F.
Donaldson Richard L.
Kesterson James C.
Nelms David C.
Petersen Bret J.
Texas Instruments Incorporated
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