Three-dimensional, deep-trench, high-density read-only memory (R

Details Three-dimensional, deep-trench, high-density read-only memory (R Three-dimensional, deep-trench, high-density read-only memory (R

1997-08-20

2000-01-25

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257391, 257397, 257622, H01L 2976

Patent

active

060181869

ABSTRACT:
A three-dimensional, deep-trench, high-density ROM and its manufacturing method are provided. The ROM device comprises a silicon substrate having a plurality of parallel trenches above it surface, wherein, between every two adjacent trenches, there is a higher region. During programming of the ROM device, deeper trenches are formed to define the OFF-state non-conducting memory cells, so that misalignment problems that lead to transistor cell leakage are prevented. The ROM device provides reduced breakdown of the source/drain regions as well.

REFERENCES:
patent: 5214303 (1993-05-01), Aoki
patent: 5329148 (1994-07-01), Aoki

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